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Encyclopedia > TTRAM
Current event marker This article contains information about a scheduled or expected future product.
It may contain preliminary or speculative information, and may not reflect the final version of the product.
Memory types
Volatile
Non-Volatile

TTRAM, short for "Twin Transistor RAM" is new type of computer memory in development by Renesas. Image File history File links Current_event_marker. ... To meet Wikipedias quality standards, this article or section may require cleanup. ... Volatile memory refers to computer memory that must be powered to maintain its data. ... Dynamic random access memory (DRAM) is a type of random access memory that stores each bit of data in a separate capacitor. ... A high-speed DRAM chip developed by Ramtron International Corporation, Colorado Springs, CO. It allows overlap of a read at the trailing end of a write operation to obtain its speed. ... A six-transistor CMOS SRAM cell. ... 1T-SRAM is MoSyss implementation of embedded-DRAM on a conventional digital-logic (standard-cell) ASIC process. ... Z-RAM, short for zero capacitor DRAM is a new type of computer memory in development by Innovative Silicon Inc. ... Non-volatile memory, or non-volatile storage, is computer memory that can retain the stored information even when not powered. ... A USB Flash Memory Device. ... Read-only memory (ROM) is a class of storage media used in computers and other electronic devices. ... D23128C PROM on the board of ZX Spectrum A programmable read-only memory (PROM) or field programmable read-only memory (FPROM) is a form of digital memory where the setting of each bit is locked by a fuse or antifuse. ... EPROM. The small quartz window admits UV light during erasure. ... An EEPROM (also called an E2PROM) or Electronically Erasable Programmable Read-Only Memory, is a non-volatile storage chip used in computers and other devices to store small amounts of volatile (configuration) data. ... Ferroelectric RAM (FRAM or FeRAM) is a type of non-volatile computer memory, similar to EEPROM but based on electric field orientation and with near-unlimited number (exceeding 1010 for 5V devices and even more for 3. ... Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology, which has been in development since the 1990s. ... Phase-change memory (also known as PCM, PRAM, Ovonic Unified Memory and Chalcogenide RAM [C-RAM]) is a type of non-volatile computer memory. ... Wikipedia does not have an article with this exact name. ... RRAM or Resistive Random Access Memory is a new non-volatile memory type begin developed by Sharp. ... Nano-RAM, is a proprietary computer memory technology from the company Nantero. ... The terms storage (U.K.) or memory (U.S.) refer to the parts of a digital computer that retain physical state (data) for some interval of time, possibly even after electrical power to the computer is turned off. ...


TTRAM is similar to conventional one-transistor, one-capacitor DRAM in concept, but eliminates the capacitor by relying the floating body effect inherent in a silicon on insulator (SOI) manufacturing process. This effect causes capacitance to built up between the transistors and the underlying substrate, originally considered a nuisance, but here used to replace a part outright. Since a transistor created using the SOI process is somewhat smaller than a capacitor, TTRAM offers somewhat higher densities than conventional DRAM. Since prices are strongly related to density, TTRAM is theoretically less expensive. However the requirement to be built on SOI fab lines, which are currently the "leading edge", makes the cost somewhat unpredictable at this point. Dram can mean several things: For the imperial unit of volume see dram (unit), commonly used to describe a measure of Scotch whisky For the imperial unit of weight or mass see avoirdupois and apothecaries system (of mass) For the Armenian monetary unit see dram (currency) DRAM is a type... Capacitors: SMD ceramic at top left; SMD tantalum at bottom left; through-hole tantalum at top right; through-hole electrolytic at bottom right. ... Floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator technology on the history of its biasing and the carrier recombination processes. ... Silicon on insulator (SOI) is a layered structure consisting of a thin layer of silicon, from 50 nm to 100 µm, which is created on an insulating substrate, which is usually sapphire or silicon with an insulating layer of silicon dioxide(SiO2) 80 nm to 3 µm thick on its... An etched silicon wafer In microelectronics, a wafer is a thin slice of semiconducting material, such as a silicon crystal, upon which microcircuits are constructed by doping (for example, diffusion or ion implantation), etching, and deposition of various materials. ... It has been suggested that this article or section be merged into Fabrication plant. ...


A similar technology is Z-RAM, which uses only a single transistor and is thus even higher density than TTRAM. Like TTRAM, Z-RAM relies on the floating body effect of SOI, and presumably has a similar manufacturing process. Z-RAM also claims to be faster, as fast as SRAM used in cache, which makes it particularly interesting for CPU designs which are being built on SOI lines anyway. Z-RAM, short for zero capacitor DRAM is a new type of computer memory in development by Innovative Silicon Inc. ... A six-transistor CMOS SRAM cell. ... Look up cache in Wiktionary, the free dictionary. ... CPU can stand for: in computing: Central processing unit in journalism: Commonwealth Press Union in law enforcement: Crime prevention unit in software: Critical patch update, a type of software patch distributed by Oracle Corporation in Macleans College is often known as Ash Lim. ...


External links

  • Renesas develops capacitor-less TTRAM

  Results from FactBites:
 
Nanomem - Work Planed (1336 words)
The objective of this proposal is to develop this new technology to the degree where it is capable to replace the currently available generation of RAM (which is based on semiconductor technology) in all applications.
Implementation of TTRAM requires the use of three separate sets of control line arrays and a special pulse read protocol in which DC bias voltages are used to suppress the parasitic conduction paths and the signals are written and read as superimposed voltage pulses.
The TTRAM structure is a second technological issue to reduce the size of a new generation MRAM.
TTRAM - Wikipedia, the free encyclopedia (227 words)
TTRAM, short for "Twin Transistor RAM" is new type of computer memory in development by Renesas.
This effect causes capacitance to built up between the transistors and the underlying substrate, originally considered a nuisance, but here used to replace a part outright.
However the requirement to be built on SOI fab lines, which are currently the "leading edge", makes the cost somewhat unpredictable at this point.
  More results at FactBites »

 
 

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