Reverse leakage current in the semiconductor is the current flowing from the semiconductor when we reverse bias that device. A p-n junction is formed by combining N-type and P-type semiconductors together in very close contact. ...
A reverse bias V.sub.R applied to the N.sup.- -type layers 38 and 42, and the N-type layer is 0 V, or 40 V whereas a reverse bias V.sub.
When the reverse bias is applied between the anode electrode film 34 and the cathode electrode film 32, the PN junction located between each P.sup.+ -type area 46 and the N.sup.-- -type layer 40 is reverse-biased, and a depletion layer develops and expands into the N.sup.-- -type layer 40 which as a low impurity concentration.
This current path (i.e., the portion 58) expands when a forward bias is applied to the JBS rectifier, and a forward current thereby flows, the substrate therefore has a high current efficiency, and the JBS rectifier exhibits a forward-current characteristic extremely similar to that of the conventional SBD rectifier.
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