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Encyclopedia > RRAM
Current event marker This article contains information about a scheduled or expected future product.
It may contain preliminary or speculative information, and may not reflect the final version of the product.
Memory types

RRAM or Resistive Random Access Memory is a new non-volatile memory type begin developed by Sharp, Samsung, Fujitsu, Spansion, Macronix, Winbond and other companies. Image File history File links Current_event_marker. ... To meet Wikipedias quality standards, this article or section may require cleanup. ... Volatile memory refers to computer memory that must be powered to maintain its data. ... Dynamic random access memory (DRAM) is a type of random access memory that stores each bit of data in a separate capacitor. ... A high-speed DRAM chip developed by Ramtron International Corporation, Colorado Springs, CO. It allows overlap of a read at the trailing end of a write operation to obtain its speed. ... Static random access memory (SRAM) is a type of semiconductor memory. ... 1T-SRAM is MoSyss implementation of embedded-DRAM on a conventional digital-logic (standard-cell) ASIC process. ... Z-RAM, short for zero capacitor DRAM is a new type of computer memory in development by Innovative Silicon Inc. ... TTRAM, short for Twin Transistor RAM is new type of computer memory in development by Renesas. ... Non-volatile memory, or non-volatile storage, is computer memory that can retain the stored information even when not powered. ... A USB flash drive. ... Read-only memory (ROM) is a class of storage media used in computers and other electronic devices. ... D23128C PROM on the board of ZX Spectrum A programmable read-only memory (PROM) or field programmable read-only memory (FPROM) is a form of digital memory where the setting of each bit is locked by a fuse or antifuse. ... EPROM. The small quartz window admits UV light during erasure. ... An EEPROM (also called an E2PROM)[] or Electronically Erasable Programmable Read-Only Memory, is a non-volatile storage chip used in computers and other devices to store small amounts of volatile (configuration) data. ... Ferroelectric RAM (FRAM or FeRAM) is a type of non-volatile computer memory, similar to EEPROM but based on electric field orientation and with near-unlimited number (exceeding 1010 for 5V devices and even more for 3. ... Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology, which has been in development since the 1990s. ... Phase-change memory (also known as PCM, PRAM, Ovonic Unified Memory and Chalcogenide RAM [C-RAM]) is a type of non-volatile computer memory. ... Wikipedia does not have an article with this exact name. ... Nano-RAM, is a proprietary computer memory technology from the company Nantero. ... Non-Volatile Random Access Memory (NVRAM) is a computer memory chip which will not lose its information when the power is lost. ... The word sharp or acronym SHARP has several uses: Look up sharp in Wiktionary, the free dictionary. ... Samsung Group is one of the largest South Korean business groupings. ... For the district in Saga, Japan, see Fujitsu, Saga. ... Spansion Inc. ... Winbond Electronics Corporation is a Taiwan-based corporation which was founded in 1987 and is a producer of semiconductors and several types of integrated circuits, most notably Dynamic RAM, Static RAM and microcontrollers. ...

Not much is known about this technology at the moment but according to Sharp it will be up to 100 times faster than current Flash memory.[1] Additionally, more details can be found in U.S. patent filing number 6946702, which claims to cover "Resistance random access memory", possibly the same, or a related, technology.[2] A USB flash drive. ... A patent is a set of exclusive rights granted by a state to a patentee (the inventor or assignee) for a fixed period of time in exchange for the regulated, public disclosure of certain details of a device, method, process or composition of matter (substance) (known as an invention) which...

Different forms of RRAM have been disclosed, based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching as early as 1967.[3] Perovskite (calcium titanium oxide, CaTiO3) is a relatively rare mineral occurring in orthorhombic (pseudocubic) crystals. ... In chemistry, the term transition metal (sometimes also called a transition element) has two possible meanings: It commonly refers to any element in the d-block of the periodic table, including zinc, cadmium and mercury. ... A chalcogenide is a binary compound consisting of a chalcogen and a more electropositive element. ...

The basic idea is that a dielectric, which is normally insulating, can be made to conduct through a filament or conduction path formed after application of a sufficiently high voltage. The conduction path formation can arise from different mechanisms, including defects, metal migration, etc. Once the filament is formed, it may be reset (broken, resulting in high resistance) or set (re-formed, resulting in lower resistance) by an appropriately applied voltage.


  1. ^ Sharp Develops Basic Technology for RRAM, Next-Generation Nonvolatile Memory
  2. ^ Resistance random access memory - Google Patents
  3. ^ D. R. Lamb and P. C. Rundle, "A non-filamentary switching action in thermally grown silicon dioxide films", Br. J. Appl. Phys. 18, 29-32 (1967)



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