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Encyclopedia > IGBT

The Insulated Gate Bipolar Transistor combines the simple gate drive characteristics of the MOSFET with the high current and low saturation voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


The IGBT is a recent invention. The "first-generation" devices of the 1980s and early '90s were relatively slow in switching, and prone to failure through such modes as latchup and secondary breakdown. Second-generation devices were much improved, and the current third-generation ones are even better, with speed rivalling MOSFETs, and excellent ruggedness and tolerance of overloads.


The IGBT is mainly used in switching power supplies and motor control applications. The extremely high pulse ratings of second- and third- generation devices also make them useful for generating large power pulses in areas like particle and plasma physics, where they are starting to supersede older devices like thyratrons and spark gaps.


These high pulse ratings, and low prices on the surplus market, also make them great fun for the hobbyist, who can now generate colossal amounts of high-frequency power to drive experiments like Tesla coils.


  Results from FactBites:
 
STMicroelectronics - IGBTs (187 words)
With the introduction of the latest generation of strip-based PowerMESH™ IGBTs, ST has expanded its product offer for a very large variety of applications including white goods, PDP, automobile electronic ignition, motor drive, light dimmers, induction cookers, high frequency electronic ballasts, HID drivers, UPS and welding equipment.
"W" Series IGBTs: Ultra fast IGBTs for welding, PFC, lighting and high frequency applications.
"S" series IGBTs for pre-heating ballast and light dimmer applications
IGBTs Basics (1951 words)
This structure is quite similar to that of the vertical diffused MOSFET except for the presence of the p+ layer that forms the drain of the IGBT.
The turn-on switching transients of IGBTs are very similar to MOSFETs since the IGBT is essentially acting as a MOSFET during most of the turn-on interval.
A negative voltage bias is used to improve the IGBT immunity to collector-to-emitter dv/dt injected noise and reduce turn-off losses as shown in Fig.
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