The floating gate transistor is a variant of transistor that is commonly used for non-volatile storage such as flash, EPROM and EEPROM memory. Floating gate transistors are almost always floating gate MOSFETs. Floating gate MOSFETs are useful because of their ability to store an electrical charge for extended periods of time even when they have no power. Floating gate MOSFETs are composed of a normal MOSFET and one or more capacitors used to couple control voltages to the floating gate. Oxide surrounds the floating gate entirely, so charge trapped on the floating gate remains there. The charge stored on the floating gate can be modified by applying voltages to the source, drain, and control gate terminals such that the fields result in phenomena like Fowler-Nordheim tunneling and hot-electron injection. Assorted transistors The transistor is a solid state semiconductor device that can be used for amplification, switching, voltage stabilization, signal modulation and many other functions. ... Non-volatile storage is a category of computer storage. ... A USB Flash Memory Device. ... EPROM. The small quartz window admits UV light during erasure. ... To meet Wikipedias quality standards, this article or section may require cleanup. ... Example of a MOSFET The metal oxide semiconductor field-effect transistor (MOSFET), is by far the most common field-effect transistor in both digital and analog circuits. ... Example of a MOSFET The metal oxide semiconductor field-effect transistor (MOSFET), is by far the most common field-effect transistor in both digital and analog circuits. ... Quantum tunneling is the quantum-mechanical effect of transitioning through a classically-forbidden energy state. ...
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A Floating Gate Programmable MOSFET Using Standard Double-Poly CMOS Process
The gate of this transistor is formed by a first-level polysilicon region 42d, which is capacitively coupled to gate reference line 18-2, also formed from a second level polysilicon layer, and separated from floatinggate 42d by a thin layer of inter-poly oxide 44d.
The gate of P-channel MOS transistor 80 is connected to a control node D.sub.H and the gate of N-channel MOS transistor 82 is connected to a control node D.sub.L. The common connection between the drains of P-channel MOS transistor 80 and N-channel MOS transistor 82 is connected to one of row lines 14-1 to 14-3.
The gate of P-channel MOS transistor 88 is connected to a control node V.sub.H and the gate of N-channel MOS transistor 90 is connected to a control node V.sub.L. The common connection between the drains of P-channel MOS transistor 88 and N-channel MOS transistor 90 is connected to one of column-sum lines 16-1 to 16-3.
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